Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films

Doron Azulay; Oded Millo; Isaac Balberg; Hans Werner Schock; Iris Visoly-Fisher; David Cahen

doi:10.1016/j.solmat.2006.08.006

Current routes in polycrystalline CuInSe₂ and Cu(In,Ga)Se₂ films

Doron Azulay, Oded Millo^*, Isaac Balberg, Hans Werner Schock, Iris Visoly-Fisher, David Cahen

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe₂ and p-Cu(In,Ga)Se₂ films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

Original language	English
Pages (from-to)	85-90
Number of pages	6
Journal	Solar Energy Materials and Solar Cells
Volume	91
Issue number	1
DOIs	https://doi.org/10.1016/j.solmat.2006.08.006
State	Published - 5 Jan 2007

Bibliographical note

Funding Information:
This work was supported in part by the Israel Science Foundation (the Jerusalem group) and by the Kimmel Centre for Nanoscale Science (WIS). We thank Dr. S. Cohen, WIS, for introducing us to the two-pass laser on/off method with the NT-MDT AFM system. DC holds the Schaefer Chair in Energy Research.

Keywords

CIGS
CIS
Conductive AFM
Grain boundaries
Solar cell

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2006.08.006

Cite this

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title = "Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films",

abstract = "Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.",

keywords = "CIGS, CIS, Conductive AFM, Grain boundaries, Solar cell",

author = "Doron Azulay and Oded Millo and Isaac Balberg and Schock, {Hans Werner} and Iris Visoly-Fisher and David Cahen",

note = "Funding Information: This work was supported in part by the Israel Science Foundation (the Jerusalem group) and by the Kimmel Centre for Nanoscale Science (WIS). We thank Dr. S. Cohen, WIS, for introducing us to the two-pass laser on/off method with the NT-MDT AFM system. DC holds the Schaefer Chair in Energy Research.",

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AU - Azulay, Doron

AU - Millo, Oded

AU - Balberg, Isaac

AU - Schock, Hans Werner

AU - Visoly-Fisher, Iris

AU - Cahen, David

N1 - Funding Information: This work was supported in part by the Israel Science Foundation (the Jerusalem group) and by the Kimmel Centre for Nanoscale Science (WIS). We thank Dr. S. Cohen, WIS, for introducing us to the two-pass laser on/off method with the NT-MDT AFM system. DC holds the Schaefer Chair in Energy Research.

PY - 2007/1/5

Y1 - 2007/1/5

N2 - Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

AB - Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of ∼100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells.

KW - CIGS

KW - CIS

KW - Conductive AFM

KW - Grain boundaries

KW - Solar cell

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