Abstract
The theory of heating of semiconductor laser bar imbedded between two heat spreaders was discussed. The heat sources from p-cladding layer, active region n-cladding layers was considered. It was found that heat spread in the lateral direction comes mainly from the current spread and heat conductance in relatively thick substrates. The result shows that current density across the active region is nonuniform and magnitude of nonuniformity grows when the resistance p-cladding layer decreases. The thermal resistance of buffer layer affects the heating of active region and lateral width of temperature distribution and active region edges experienced higher expected temperature.
Original language | English |
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Pages (from-to) | 3880-3889 |
Number of pages | 10 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 8 |
DOIs | |
State | Published - 15 Apr 2004 |