Damage annealing process in implanted poly-silicon studied by nanocalorimetry: Effects of heating rate and beam flux

R. Karmouch; J. F. Mercure; Y. Anahory; F. Schiettekatte

doi:10.1016/j.nimb.2005.07.038

Damage annealing process in implanted poly-silicon studied by nanocalorimetry: Effects of heating rate and beam flux

R. Karmouch, J. F. Mercure, Y. Anahory, F. Schiettekatte^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Nanocalorimetry of ion-implanted damage annealing in polycrystalline Si is presented. Si was implanted at 30 keV. Temperature scans were performed between room temperature and 350 °C at heating rates between 48 and 144 kK/s for a fluence of 1 × 10¹³ Si/cm², and between room temperature and 540 °C at beam fluxes of 11 and 44 nA/cm² with a fluence of 2 × 10¹³ Si/cm². The heat release shows no features, but rather a broad increase with temperature which is characteristic of a series of processes continuously distributed in terms of activation energy. Higher heating rates shift the signal towards higher temperatures and decrease its amplitude, which is typical for thermally activated processes. Lower beam flux implants translate into smaller heat release. This is partly attributed to shorter implantation times at higher fluxes, which leave less time for dynamic annealing, but could also be due to the higher impact rate in the environment of previously generated disordered zones. Such impact generates damage that may stabilize disordered zones, which would have enough time to undergo dynamic annealing at lower fluxes.

Original language	English
Pages (from-to)	341-345
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	241
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2005.07.038
State	Published - Dec 2005
Externally published	Yes

Bibliographical note

Funding Information:
The authors are grateful to S. Roorda and M. Chicoine (Université de Montréal), and L.H. Allen and M.Yu. Efremov (UIUC) for fruitful discussions. Thanks also go to Y.Q. Wang for TEM, L. Godbout, R. Gosselin for their technical assistance with the accelerator operation, and M. Skvarla and P. Infante of the Cornell Nanofabrication Facility, as well as M.-H. Bernier and S. Bah of the École Polytechnique de Montréal for their assistance with nanocalorimeters fabrication. This work benefited from the financial support of NanoQuébec, the Fonds Québécois de Recherche sur la Nature et les Technologies and the Natural Science and Engineering Research Council of Canada.

Keywords

Beam flux
Damage annealing
Heat rate
Ion implantation
Nanocalorimetry

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10.1016/j.nimb.2005.07.038

Cite this

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title = "Damage annealing process in implanted poly-silicon studied by nanocalorimetry: Effects of heating rate and beam flux",

abstract = "Nanocalorimetry of ion-implanted damage annealing in polycrystalline Si is presented. Si was implanted at 30 keV. Temperature scans were performed between room temperature and 350 °C at heating rates between 48 and 144 kK/s for a fluence of 1 × 1013 Si/cm2, and between room temperature and 540 °C at beam fluxes of 11 and 44 nA/cm2 with a fluence of 2 × 1013 Si/cm2. The heat release shows no features, but rather a broad increase with temperature which is characteristic of a series of processes continuously distributed in terms of activation energy. Higher heating rates shift the signal towards higher temperatures and decrease its amplitude, which is typical for thermally activated processes. Lower beam flux implants translate into smaller heat release. This is partly attributed to shorter implantation times at higher fluxes, which leave less time for dynamic annealing, but could also be due to the higher impact rate in the environment of previously generated disordered zones. Such impact generates damage that may stabilize disordered zones, which would have enough time to undergo dynamic annealing at lower fluxes.",

keywords = "Beam flux, Damage annealing, Heat rate, Ion implantation, Nanocalorimetry",

author = "R. Karmouch and Mercure, {J. F.} and Y. Anahory and F. Schiettekatte",

note = "Funding Information: The authors are grateful to S. Roorda and M. Chicoine (Universit{\'e} de Montr{\'e}al), and L.H. Allen and M.Yu. Efremov (UIUC) for fruitful discussions. Thanks also go to Y.Q. Wang for TEM, L. Godbout, R. Gosselin for their technical assistance with the accelerator operation, and M. Skvarla and P. Infante of the Cornell Nanofabrication Facility, as well as M.-H. Bernier and S. Bah of the {\'E}cole Polytechnique de Montr{\'e}al for their assistance with nanocalorimeters fabrication. This work benefited from the financial support of NanoQu{\'e}bec, the Fonds Qu{\'e}b{\'e}cois de Recherche sur la Nature et les Technologies and the Natural Science and Engineering Research Council of Canada.",

year = "2005",

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doi = "10.1016/j.nimb.2005.07.038",

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volume = "241",

pages = "341--345",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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Damage annealing process in implanted poly-silicon studied by nanocalorimetry: Effects of heating rate and beam flux. / Karmouch, R.; Mercure, J. F.; Anahory, Y. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 241, No. 1-4, 12.2005, p. 341-345.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Damage annealing process in implanted poly-silicon studied by nanocalorimetry

T2 - Effects of heating rate and beam flux

AU - Karmouch, R.

AU - Mercure, J. F.

AU - Anahory, Y.

AU - Schiettekatte, F.

N1 - Funding Information: The authors are grateful to S. Roorda and M. Chicoine (Université de Montréal), and L.H. Allen and M.Yu. Efremov (UIUC) for fruitful discussions. Thanks also go to Y.Q. Wang for TEM, L. Godbout, R. Gosselin for their technical assistance with the accelerator operation, and M. Skvarla and P. Infante of the Cornell Nanofabrication Facility, as well as M.-H. Bernier and S. Bah of the École Polytechnique de Montréal for their assistance with nanocalorimeters fabrication. This work benefited from the financial support of NanoQuébec, the Fonds Québécois de Recherche sur la Nature et les Technologies and the Natural Science and Engineering Research Council of Canada.

PY - 2005/12

Y1 - 2005/12

N2 - Nanocalorimetry of ion-implanted damage annealing in polycrystalline Si is presented. Si was implanted at 30 keV. Temperature scans were performed between room temperature and 350 °C at heating rates between 48 and 144 kK/s for a fluence of 1 × 1013 Si/cm2, and between room temperature and 540 °C at beam fluxes of 11 and 44 nA/cm2 with a fluence of 2 × 1013 Si/cm2. The heat release shows no features, but rather a broad increase with temperature which is characteristic of a series of processes continuously distributed in terms of activation energy. Higher heating rates shift the signal towards higher temperatures and decrease its amplitude, which is typical for thermally activated processes. Lower beam flux implants translate into smaller heat release. This is partly attributed to shorter implantation times at higher fluxes, which leave less time for dynamic annealing, but could also be due to the higher impact rate in the environment of previously generated disordered zones. Such impact generates damage that may stabilize disordered zones, which would have enough time to undergo dynamic annealing at lower fluxes.

AB - Nanocalorimetry of ion-implanted damage annealing in polycrystalline Si is presented. Si was implanted at 30 keV. Temperature scans were performed between room temperature and 350 °C at heating rates between 48 and 144 kK/s for a fluence of 1 × 1013 Si/cm2, and between room temperature and 540 °C at beam fluxes of 11 and 44 nA/cm2 with a fluence of 2 × 1013 Si/cm2. The heat release shows no features, but rather a broad increase with temperature which is characteristic of a series of processes continuously distributed in terms of activation energy. Higher heating rates shift the signal towards higher temperatures and decrease its amplitude, which is typical for thermally activated processes. Lower beam flux implants translate into smaller heat release. This is partly attributed to shorter implantation times at higher fluxes, which leave less time for dynamic annealing, but could also be due to the higher impact rate in the environment of previously generated disordered zones. Such impact generates damage that may stabilize disordered zones, which would have enough time to undergo dynamic annealing at lower fluxes.

KW - Beam flux

KW - Damage annealing

KW - Heat rate

KW - Ion implantation

KW - Nanocalorimetry

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Damage annealing process in implanted poly-silicon studied by nanocalorimetry: Effects of heating rate and beam flux

Abstract

Bibliographical note

Keywords

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