DC HALL EFFECT MEASUREMENTS ON TTF-TCNQ.

J. R. Cooper*, M. Miljak, G. Delplanque, D. Jerome, M. Weger, J. M. Fabre, L. Giral

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

DC Hall effect measurements were made on single crystals of TTF-TCNQ in the metallic region, at atmospheric pressure, and under pressure of 6 kbars. For the field orientation employed (H parallel to the crystalline a axis) the average value of the low field Hall coefficient is minus 4. 2 plus or minus 0. 6 multiplied by 10** minus **1**1 Vcm/Ag at room temperature, which is approximately consistent with other estimates of the electron density. The influence of the electrical contacts is discussed in detail and the temperature dependence of R//H is compared with previous work on HMTSF-TCNQ.

Original languageEnglish
Pages (from-to)1079-1103
Number of pages25
JournalJournal De Physique
Volume38
Issue number9
DOIs
StatePublished - 1977

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