Deep-level sensitization in Ge-SiO2 composite films observed by photocurrent spectroscopy

O. Wolf, I. Balberg, O. Millo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


We studied the temperature dependence of the photocurrent spectra of a Ge-SiO2 composite thin film. We found that the spectral position of the photocurrent peak is determined by the competition between absorption and non-radiative recombination and that its temperature dependence is associated with the population variation of the energetically deep levels in the system under "thermal quenching" conditions. Combining these results with our previous deep-level transient spectroscopy data enables the association of these levels with the quantum confinement effect. We thus identify here a non-radiative recombination process associated with deep-level sensitization that stems from quantum confinement.

Original languageAmerican English
Pages (from-to)184-188
Number of pages5
JournalThin Solid Films
StatePublished - 1 Jan 2015

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.


  • Germanium
  • Nanocrystals
  • Photocurrent spectroscopy
  • Quantum confinement


Dive into the research topics of 'Deep-level sensitization in Ge-SiO2 composite films observed by photocurrent spectroscopy'. Together they form a unique fingerprint.

Cite this