Deep-level sensitization in Ge-SiO2 composite films observed by photocurrent spectroscopy

O. Wolf; I. Balberg; O. Millo

doi:10.1016/j.tsf.2014.12.004

Deep-level sensitization in Ge-SiO₂ composite films observed by photocurrent spectroscopy

O. Wolf, I. Balberg, O. Millo^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We studied the temperature dependence of the photocurrent spectra of a Ge-SiO₂ composite thin film. We found that the spectral position of the photocurrent peak is determined by the competition between absorption and non-radiative recombination and that its temperature dependence is associated with the population variation of the energetically deep levels in the system under "thermal quenching" conditions. Combining these results with our previous deep-level transient spectroscopy data enables the association of these levels with the quantum confinement effect. We thus identify here a non-radiative recombination process associated with deep-level sensitization that stems from quantum confinement.

Original language	American English
Pages (from-to)	184-188
Number of pages	5
Journal	Thin Solid Films
Volume	574
DOIs	https://doi.org/10.1016/j.tsf.2014.12.004
State	Published - 1 Jan 2015

Bibliographical note

Funding Information:
This work was supported by the Israel Science Foundation (ISF) and the Israeli Ministry of Science and Technology. IB acknowledges the support of the Enrique Berman chair in Solar Energy Research at the HU and OM acknowledges the support of the Harry De Jur Chair of Applied Science at the HU.

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

Germanium
Nanocrystals
Photocurrent spectroscopy
Quantum confinement

Access to Document

10.1016/j.tsf.2014.12.004

Cite this

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title = "Deep-level sensitization in Ge-SiO2 composite films observed by photocurrent spectroscopy",

abstract = "We studied the temperature dependence of the photocurrent spectra of a Ge-SiO2 composite thin film. We found that the spectral position of the photocurrent peak is determined by the competition between absorption and non-radiative recombination and that its temperature dependence is associated with the population variation of the energetically deep levels in the system under {"}thermal quenching{"} conditions. Combining these results with our previous deep-level transient spectroscopy data enables the association of these levels with the quantum confinement effect. We thus identify here a non-radiative recombination process associated with deep-level sensitization that stems from quantum confinement.",

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AU - Balberg, I.

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N2 - We studied the temperature dependence of the photocurrent spectra of a Ge-SiO2 composite thin film. We found that the spectral position of the photocurrent peak is determined by the competition between absorption and non-radiative recombination and that its temperature dependence is associated with the population variation of the energetically deep levels in the system under "thermal quenching" conditions. Combining these results with our previous deep-level transient spectroscopy data enables the association of these levels with the quantum confinement effect. We thus identify here a non-radiative recombination process associated with deep-level sensitization that stems from quantum confinement.

AB - We studied the temperature dependence of the photocurrent spectra of a Ge-SiO2 composite thin film. We found that the spectral position of the photocurrent peak is determined by the competition between absorption and non-radiative recombination and that its temperature dependence is associated with the population variation of the energetically deep levels in the system under "thermal quenching" conditions. Combining these results with our previous deep-level transient spectroscopy data enables the association of these levels with the quantum confinement effect. We thus identify here a non-radiative recombination process associated with deep-level sensitization that stems from quantum confinement.

KW - Germanium

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KW - Photocurrent spectroscopy

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