TY - JOUR
T1 - Defect and nano-crystallite photoluminescence in Si-SiOx systems
AU - Espinoza, F. G.Becerril
AU - Torchynska, T. V.
AU - Goldstein, Y.
AU - Savir, E.
AU - Jedrzejewski, J.
AU - Khomenkova, L.
AU - Korsunska, N.
PY - 2005
Y1 - 2005
N2 - In this paper the room temperature photoluminescence (PL) and its temperature dependence in 80-300 K range have been investigated for magnetron co-sputtered Si-rich-SiOx systems with Si nanocrystallites. It is shown that PL spectra consist of the five PL bands peaked at 1.32-1.39, 1.42-1.58, 1.70-1.80, 2.05 and 2.30 eV. The PL band with peak at 1.42-1.58 eV is attributed to exciton recombination in Si nanocrystallites. It was shown the well enough correlation between theoretical estimation and experimental data for exciton transition energies in Si nanocrystallites with the sizes of 3.5-5.0 nm. For smaller Si nanocrystallites (2.5 nm) the difference between experimental and calculated values of exciton transition energy is noticeable. The three visible bands are assigned to oxide related defects.
AB - In this paper the room temperature photoluminescence (PL) and its temperature dependence in 80-300 K range have been investigated for magnetron co-sputtered Si-rich-SiOx systems with Si nanocrystallites. It is shown that PL spectra consist of the five PL bands peaked at 1.32-1.39, 1.42-1.58, 1.70-1.80, 2.05 and 2.30 eV. The PL band with peak at 1.42-1.58 eV is attributed to exciton recombination in Si nanocrystallites. It was shown the well enough correlation between theoretical estimation and experimental data for exciton transition energies in Si nanocrystallites with the sizes of 3.5-5.0 nm. For smaller Si nanocrystallites (2.5 nm) the difference between experimental and calculated values of exciton transition energy is noticeable. The three visible bands are assigned to oxide related defects.
UR - http://www.scopus.com/inward/record.url?scp=27444436653&partnerID=8YFLogxK
U2 - 10.1002/pssc.200460737
DO - 10.1002/pssc.200460737
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AN - SCOPUS:27444436653
SN - 1610-1634
VL - 2
SP - 2990
EP - 2993
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 8
ER -