Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

Boris Desiatov; Ilya Goykhman; Joseph Shappir; Uriel Levy

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

Boris Desiatov, Ilya Goykhman, Joseph Shappir, Uriel Levy

Department of Applied Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.

Original language	English
State	Published - 2014
Event	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/Territory	United States
City	San Jose
Period	8/06/14 → 13/06/14

Cite this

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title = "Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band",

abstract = "We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.",

author = "Boris Desiatov and Ilya Goykhman and Joseph Shappir and Uriel Levy",

year = "2014",

language = "אנגלית",

note = "2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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T1 - Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

AU - Desiatov, Boris

AU - Goykhman, Ilya

AU - Shappir, Joseph

AU - Levy, Uriel

PY - 2014

Y1 - 2014

N2 - We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.

AB - We experimentally demonstrate avalanche sub bandgap detection of light at 1550 nm wavelength via surface states using the configuration of interleaved PN junctions along a silicon waveguide. The device operates in a fully depleted mode.

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T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band

Abstract

Conference

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