Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2

I. V. Antonova, M. B. Gulyaev, Z. S. Yanovitskaya, Y. Goldstein, J. Jedrzejewski

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with activation energy from 2.1 eV near percolation threshold and down to 0.1 eV for higher Si content. The variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages785-786
Number of pages2
DOIs
StatePublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period24/07/0628/07/06

Keywords

  • Conductivity
  • Excess Si content
  • Oxide matrix
  • Silicon nanocrystals

Fingerprint

Dive into the research topics of 'Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2'. Together they form a unique fingerprint.

Cite this