@inproceedings{2921f7bf58af4afc8b50c4cb4a27394c,
title = "Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2",
abstract = "The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with activation energy from 2.1 eV near percolation threshold and down to 0.1 eV for higher Si content. The variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.",
keywords = "Conductivity, Excess Si content, Oxide matrix, Silicon nanocrystals",
author = "Antonova, {I. V.} and Gulyaev, {M. B.} and Yanovitskaya, {Z. S.} and Y. Goldstein and J. Jedrzejewski",
year = "2007",
doi = "10.1063/1.2730125",
language = "אנגלית",
isbn = "9780735403970",
series = "AIP Conference Proceedings",
pages = "785--786",
booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",
note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",
}