Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2

I. V. Antonova; M. B. Gulyaev; Z. S. Yanovitskaya; Y. Goldstein; J. Jedrzejewski

doi:10.1063/1.2730125

Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO₂

I. V. Antonova
, M. B. Gulyaev
, Z. S. Yanovitskaya
, Y. Goldstein
, J. Jedrzejewski

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The system of silicon nanocrystals embedded in SiO₂ was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with activation energy from 2.1 eV near percolation threshold and down to 0.1 eV for higher Si content. The variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	785-786
Number of pages	2
DOIs	https://doi.org/10.1063/1.2730125
State	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	24/07/06 → 28/07/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Conductivity
Excess Si content
Oxide matrix
Silicon nanocrystals

Access to Document

10.1063/1.2730125

Cite this

Antonova, I. V., Gulyaev, M. B., Yanovitskaya, Z. S., Goldstein, Y., & Jedrzejewski, J. (2007). Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO₂. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 785-786). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730125

@inproceedings{2921f7bf58af4afc8b50c4cb4a27394c,

title = "Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2",

abstract = "The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74\%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with activation energy from 2.1 eV near percolation threshold and down to 0.1 eV for higher Si content. The variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.",

keywords = "Conductivity, Excess Si content, Oxide matrix, Silicon nanocrystals",

author = "Antonova, \{I. V.\} and Gulyaev, \{M. B.\} and Yanovitskaya, \{Z. S.\} and Y. Goldstein and J. Jedrzejewski",

year = "2007",

doi = "10.1063/1.2730125",

language = "אנגלית",

isbn = "9780735403970",

series = "AIP Conference Proceedings",

pages = "785--786",

booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

}

Antonova, IV, Gulyaev, MB, Yanovitskaya, ZS, Goldstein, Y & Jedrzejewski, J 2007, Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO₂. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 785-786, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2730125

Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO₂. / Antonova, I. V.; Gulyaev, M. B.; Yanovitskaya, Z. S. et al.
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 785-786 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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