Deposition of device quality, low H content amorphous silicon

A. H. Mahan*, J. Carapella, B. P. Nelson, R. S. Crandall, I. Balberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

425 Scopus citations

Abstract

Device-quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.

Original languageEnglish
Pages (from-to)6728-6730
Number of pages3
JournalJournal of Applied Physics
Volume69
Issue number9
DOIs
StatePublished - 1991

Fingerprint

Dive into the research topics of 'Deposition of device quality, low H content amorphous silicon'. Together they form a unique fingerprint.

Cite this