Abstract
Device-quality hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament. These low H content films show an Urbach edge width of 50 mV and a spin density of ∼1/100 as large as that of glow discharge films containing comparable amounts of H. High substrate temperatures, deposition in a high flux of atomic H, and lack of energetic particle bombardment are suggested as reasons for this behavior.
Original language | English |
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Pages (from-to) | 6728-6730 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 69 |
Issue number | 9 |
DOIs | |
State | Published - 1991 |