Detection of explosives using field-effect transistors

Etery Sharon; Ronit Freeman; Itamar Willner

doi:10.1002/elan.200900271

Detection of explosives using field-effect transistors

Etery Sharon
, Ronit Freeman
, Itamar Willner^*

^*Corresponding author for this work

Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The gate surfaces of ion-sensitive field-effect transistor (ISFET) devices were functionalized with the π-donor units, 6-hydroxydopamine (1) or 4-aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π-donor-acceptor interactions yields charge-transfer complexes that alter the gate potential. This enables the label-free analysis of TNT with a detection limit corresponding to 1 × 10^-7 M.

Original language	English
Pages (from-to)	2185-2189
Number of pages	5
Journal	Electroanalysis
Volume	21
Issue number	20
DOIs	https://doi.org/10.1002/elan.200900271
State	Published - Oct 2009

Keywords

Explosives
Field-effect transistors
Sensors
TNT

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10.1002/elan.200900271

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abstract = "The gate surfaces of ion-sensitive field-effect transistor (ISFET) devices were functionalized with the π-donor units, 6-hydroxydopamine (1) or 4-aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via π-donor-acceptor interactions yields charge-transfer complexes that alter the gate potential. This enables the label-free analysis of TNT with a detection limit corresponding to 1 × 10-7 M.",

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author = "Etery Sharon and Ronit Freeman and Itamar Willner",

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KW - Field-effect transistors

KW - Sensors

KW - TNT

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Detection of explosives using field-effect transistors

Abstract

Keywords

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