Determination of grain-boundary potential barriers distribution in p-type polycrystalline Si

Metal-oxide-semiconductor structures employing lightly boron doped polycrystalline Si electrode are studied. The frequency dispersion of their admittance is explained by the existence of a broad distribution of intergrain potential barriers. A simple one-dimensional model is presented which yields the form of the potential barrier distribution. The observed results for the temperature and doping concentration dependence of the distribution are described and shown to be consistent with the resistivity activation energies.