Abstract
Measurements of I-V, G-V, and C-V characteristics were taken on MIS tunnel junctions where M is a metal, I is silicon oxide, and S is hydrogenated amorphous silicon, a-Si: H. The results indicate a peak in the density of states which lies 0.45 eV below the conduction-band edge. The states distribution concluded from the present study is in good agreement with the conclusions based on field-effect measurements.
| Original language | English |
|---|---|
| Pages (from-to) | 3853-3865 |
| Number of pages | 13 |
| Journal | Physical Review B |
| Volume | 22 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1980 |