Determination of surface-state parameters from transfer-loss measurements in CCD's

R. J. Kriegler; T. F. Devenyi; K. D. Chik; J. Shappir

doi:10.1063/1.325678

Determination of surface-state parameters from transfer-loss measurements in CCD's

R. J. Kriegler^*
, T. F. Devenyi
, K. D. Chik
, J. Shappir

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

A novel experimental method is described that allows the determination of surface-state capture cross section for minority carriers and the calculation of surface-state densities from transfer-loss measurements in surface channel CCD's. Using two-level polysilicon two-phase n-channel CCD's, σ_n(E) was found to vary between about 5×10^-17 and 2×10^-16 cm², and N_ss(E) between 1.7×10¹¹ and 9×10⁹ cm^-2 eV ^-1 in an energy range of 0.05 to 0.42 eV below the conduction-band edge.

Original language	English
Pages (from-to)	398-401
Number of pages	4
Journal	Journal of Applied Physics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1063/1.325678
State	Published - 1979
Externally published	Yes

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abstract = "A novel experimental method is described that allows the determination of surface-state capture cross section for minority carriers and the calculation of surface-state densities from transfer-loss measurements in surface channel CCD's. Using two-level polysilicon two-phase n-channel CCD's, σn(E) was found to vary between about 5×10-17 and 2×10-16 cm2, and Nss(E) between 1.7×1011 and 9×109 cm-2 eV -1 in an energy range of 0.05 to 0.42 eV below the conduction-band edge.",

author = "Kriegler, \{R. J.\} and Devenyi, \{T. F.\} and Chik, \{K. D.\} and J. Shappir",

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AU - Kriegler, R. J.

AU - Devenyi, T. F.

AU - Chik, K. D.

AU - Shappir, J.

PY - 1979

Y1 - 1979

N2 - A novel experimental method is described that allows the determination of surface-state capture cross section for minority carriers and the calculation of surface-state densities from transfer-loss measurements in surface channel CCD's. Using two-level polysilicon two-phase n-channel CCD's, σn(E) was found to vary between about 5×10-17 and 2×10-16 cm2, and Nss(E) between 1.7×1011 and 9×109 cm-2 eV -1 in an energy range of 0.05 to 0.42 eV below the conduction-band edge.

AB - A novel experimental method is described that allows the determination of surface-state capture cross section for minority carriers and the calculation of surface-state densities from transfer-loss measurements in surface channel CCD's. Using two-level polysilicon two-phase n-channel CCD's, σn(E) was found to vary between about 5×10-17 and 2×10-16 cm2, and Nss(E) between 1.7×1011 and 9×109 cm-2 eV -1 in an energy range of 0.05 to 0.42 eV below the conduction-band edge.

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Determination of surface-state parameters from transfer-loss measurements in CCD's

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