Determination of the surface barrier height by combined measurements of surface photovoltage and field effect

J. Shappir*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A new technique is described for determining the surface barrier height in large-gap semi-conductors. Field effect induced variations of the surface barrier height are picked up by superimposed surface photovoltage measurements. The magnitude of the electric field which causes the flattening of the energy bands is determined and used to calculate the surface barrier height in equilibrium.

Original languageEnglish
Pages (from-to)545-548
Number of pages4
JournalSurface Science
Volume26
Issue number2
DOIs
StatePublished - Jul 1971

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