Abstract
A new technique is described for determining the surface barrier height in large-gap semi-conductors. Field effect induced variations of the surface barrier height are picked up by superimposed surface photovoltage measurements. The magnitude of the electric field which causes the flattening of the energy bands is determined and used to calculate the surface barrier height in equilibrium.
Original language | English |
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Pages (from-to) | 545-548 |
Number of pages | 4 |
Journal | Surface Science |
Volume | 26 |
Issue number | 2 |
DOIs | |
State | Published - Jul 1971 |