Differential impurity induced first order Raman

Y. Yacoby*, S. Yust

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The use of differential impurity induced first order Raman scattering for the investigation of the energies of elementary excitations of pure crystals at the Van Hove critical points is discussed for the first time. It is theoretically shown that peaks are expected to appear in the differential impurity induced Raman spectra at energies equal to the Van Hove critical energies of the pure crystal. Experimentally observed differential spectrum of Tl+ induced Raman scattering in KBr crystals is presented, and the structure observed is interpreted in terms of the Van Hove critical energies known from neutron scattering data.

Original languageEnglish
Pages (from-to)1575-1578
Number of pages4
JournalSolid State Communications
Volume11
Issue number11
DOIs
StatePublished - Dec 1972

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