Diffusion Profiling Using the Graded C(V) Method

J. Shappir; A. Kolodny; Y. Shacham-Diamand

doi:10.1109/T-ED.1980.19970

Diffusion Profiling Using the Graded C(V) Method

J. Shappir, A. Kolodny, Y. Shacham-Diamand

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS C(V) measurements on a gradually etched surface is presented and analyzed. This technique is most useful for slowly varying profiles in the range of 1016−5 × 1018 cm−3. Experimental profiles are given for P in Si, and for Cd in InSb.

Original language	English
Pages (from-to)	993-995
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	27
Issue number	5
DOIs	https://doi.org/10.1109/T-ED.1980.19970
State	Published - May 1980

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title = "Diffusion Profiling Using the Graded C(V) Method",

abstract = "A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS C(V) measurements on a gradually etched surface is presented and analyzed. This technique is most useful for slowly varying profiles in the range of 1016−5 × 1018 cm−3. Experimental profiles are given for P in Si, and for Cd in InSb.",

author = "J. Shappir and A. Kolodny and Y. Shacham-Diamand",

year = "1980",

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AU - Kolodny, A.

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N2 - A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS C(V) measurements on a gradually etched surface is presented and analyzed. This technique is most useful for slowly varying profiles in the range of 1016−5 × 1018 cm−3. Experimental profiles are given for P in Si, and for Cd in InSb.

AB - A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS C(V) measurements on a gradually etched surface is presented and analyzed. This technique is most useful for slowly varying profiles in the range of 1016−5 × 1018 cm−3. Experimental profiles are given for P in Si, and for Cd in InSb.

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JO - IEEE Transactions on Electron Devices

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Diffusion Profiling Using the Graded C(V) Method

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