Diffusion Properties of Cadmium in Indium Antimonide

A. Kolodny, J. Shappir

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Diffusion profiles of cadmium in indium antimonide were measured by a modified C-V technique and were found to exhibit anomalous behavior, as commonly found in III-V compounds. The general shape of the diffusion profile on a logarithmic scale is characterized by a concave region close to the surface followed by a steep front. The steep front is explained by the interstitial-substitutional diffusion mechanism. The concave region is theoretically shown to be related to a decrease of the diffusion coefficient near the surface. This decrease is assumed to be the result of the surface proximity rather than the result of a nonmonotonic concentration dependence of the diffusion coefficient. This surface effect is physically explained by an extension of the interstitial-substitutional model. Computer simulations based on this model give profiles similar to those experimentally measured.

Original languageEnglish
Pages (from-to)1530-1534
Number of pages5
JournalJournal of the Electrochemical Society
Volume125
Issue number9
DOIs
StatePublished - Sep 1978
Externally publishedYes

Keywords

  • Boltzmann-Matano analysis
  • C-V profiling method
  • concave diffusion profiles
  • interstitial-substitutional mechanism

Fingerprint

Dive into the research topics of 'Diffusion Properties of Cadmium in Indium Antimonide'. Together they form a unique fingerprint.

Cite this