Abstract
Diffusion profiles of cadmium in indium antimonide were measured by a modified C-V technique and were found to exhibit anomalous behavior, as commonly found in III-V compounds. The general shape of the diffusion profile on a logarithmic scale is characterized by a concave region close to the surface followed by a steep front. The steep front is explained by the interstitial-substitutional diffusion mechanism. The concave region is theoretically shown to be related to a decrease of the diffusion coefficient near the surface. This decrease is assumed to be the result of the surface proximity rather than the result of a nonmonotonic concentration dependence of the diffusion coefficient. This surface effect is physically explained by an extension of the interstitial-substitutional model. Computer simulations based on this model give profiles similar to those experimentally measured.
| Original language | English |
|---|---|
| Pages (from-to) | 1530-1534 |
| Number of pages | 5 |
| Journal | Journal of the Electrochemical Society |
| Volume | 125 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1978 |
| Externally published | Yes |
Keywords
- Boltzmann-Matano analysis
- C-V profiling method
- concave diffusion profiles
- interstitial-substitutional mechanism
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