Abstract
The current-voltage characteristics of indium-oxide films in the activationless-hopping regime exhibit an inflection point at a thickness-dependent electric field. It is argued that this electric field reflects a 2D-3D dimensionality crossover expected of a variable-range-hopping system.
| Original language | English |
|---|---|
| Pages (from-to) | 2293-2296 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 64 |
| Issue number | 19 |
| DOIs | |
| State | Published - 1990 |