Direct determination of the stacking order in Gd2O3 epi-layers on GaAs

Yizhak Yacoby; Mukhles Sowwan; Ron Pindak; Julie Cross; Don Walko; Ed Stern; John Pitney; Robert MacHarrie; Minghwei Hong; Roy Clarke

Direct determination of the stacking order in Gd₂O₃ epi-layers on GaAs

Yizhak Yacoby^*, Mukhles Sowwan, Ron Pindak, Julie Cross, Don Walko, Ed Stern, John Pitney, Robert MacHarrie, Minghwei Hong, Roy Clarke

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd₂O₃ film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd₂O₃ film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd₂O₃. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd₂O₃ in which the GaAs stacking order persists throughout the entire film.

Original language	English
Pages (from-to)	173-178
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	751
State	Published - 2003
Event	Structure-Property Relationships of Oxide Surfaces and Interfaces II - Boston, MA, United States Duration: 2 Dec 2002 → 3 Dec 2002

Cite this

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title = "Direct determination of the stacking order in Gd2O3 epi-layers on GaAs",

abstract = "We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd2O3 film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd2O3 film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd2O3. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd2O3 in which the GaAs stacking order persists throughout the entire film.",

author = "Yizhak Yacoby and Mukhles Sowwan and Ron Pindak and Julie Cross and Don Walko and Ed Stern and John Pitney and Robert MacHarrie and Minghwei Hong and Roy Clarke",

year = "2003",

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volume = "751",

pages = "173--178",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Direct determination of the stacking order in Gd2O3 epi-layers on GaAs

AU - Yacoby, Yizhak

AU - Sowwan, Mukhles

AU - Pindak, Ron

AU - Cross, Julie

AU - Walko, Don

AU - Stern, Ed

AU - Pitney, John

AU - MacHarrie, Robert

AU - Hong, Minghwei

AU - Clarke, Roy

PY - 2003

Y1 - 2003

N2 - We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd2O3 film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd2O3 film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd2O3. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd2O3 in which the GaAs stacking order persists throughout the entire film.

AB - We have used Coherent Bragg Rod Analysis (COBRA) to investigate the atomic structure of a 5.6 nm thick Gd2O3 film epitaxially grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two-dimensions by determining the complex scattering factors along the substrate Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the first seven Gd2O3 film layers resembles the stacking order of Ga and As layers in GaAs then changes to the stacking order of cubic bulk Gd2O3. This behavior is distinctly different from the measured stacking order in a 2.7 nm thick Gd2O3 in which the GaAs stacking order persists throughout the entire film.

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SN - 0272-9172

VL - 751

SP - 173

EP - 178

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Structure-Property Relationships of Oxide Surfaces and Interfaces II

Y2 - 2 December 2002 through 3 December 2002

ER -

Direct determination of the stacking order in Gd₂O₃ epi-layers on GaAs

Abstract

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