Direct optical observation of the subsidiary X1c conduction band and its donor levels in InP

A. Onton*, Y. Yacoby, R. J. Chicotka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Zero-phonon and phonon-assisted optical transitions from the 1c conduction band to the subsidiary X1c conduction band and its donor levels have been observed in InP at 8°K. The X1c-1c interband energy is measured at 9605 meV, and the binding energies of donors associated with the subsidiary X1c band are found to be 106 and 175 meV (5 meV) for Te and Si, respectively.

Original languageEnglish
Pages (from-to)966-969
Number of pages4
JournalPhysical Review Letters
Volume28
Issue number15
DOIs
StatePublished - 1972

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