Effect of high density of states in the presence of interchain coupling on the transition temperature

O. Entin-Wohlman; M. Weger

doi:10.1007/BF01319545

Effect of high density of states in the presence of interchain coupling on the transition temperature

O. Entin-Wohlman^*, M. Weger

^*Corresponding author for this work

Racah Institute of Physics

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2 Scopus citations

Abstract

The combination N(0)I² (N(0)-electronic density of states at the Fermi level, I²-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ₂ band of V₃Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found that I² is almost insensitive to changes in the interchain coupling, and that a significant increase in N(0)I² of this model can be achieved only for low occupation numbers of the δ₂ band.

Original language	English
Pages (from-to)	119-123
Number of pages	5
Journal	Zeitschrift für Physik B Condensed Matter and Quanta
Volume	42
Issue number	2
DOIs	https://doi.org/10.1007/BF01319545
State	Published - Jun 1981

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abstract = "The combination N(0)I2 (N(0)-electronic density of states at the Fermi level, I2-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ2 band of V3Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found that I2 is almost insensitive to changes in the interchain coupling, and that a significant increase in N(0)I2 of this model can be achieved only for low occupation numbers of the δ2 band.",

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year = "1981",

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N2 - The combination N(0)I2 (N(0)-electronic density of states at the Fermi level, I2-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ2 band of V3Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found that I2 is almost insensitive to changes in the interchain coupling, and that a significant increase in N(0)I2 of this model can be achieved only for low occupation numbers of the δ2 band.

AB - The combination N(0)I2 (N(0)-electronic density of states at the Fermi level, I2-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ2 band of V3Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found that I2 is almost insensitive to changes in the interchain coupling, and that a significant increase in N(0)I2 of this model can be achieved only for low occupation numbers of the δ2 band.

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Effect of high density of states in the presence of interchain coupling on the transition temperature

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