Abstract
Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.
Original language | English |
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Pages (from-to) | 1557-1559 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 15 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |