Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

B. Laikhtman*, M. Heiblum, U. Meirav

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.

Original languageEnglish
Pages (from-to)1557-1559
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number15
DOIs
StatePublished - 1990
Externally publishedYes

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