Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

B. Laikhtman; M. Heiblum; U. Meirav

doi:10.1063/1.103352

Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

B. Laikhtman^*
, M. Heiblum
, U. Meirav

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 ¹⁷ cm^-3, provides the only explanation for the observed transport and single particle relaxation times.

Original language	English
Pages (from-to)	1557-1559
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	15
DOIs	https://doi.org/10.1063/1.103352
State	Published - 1990
Externally published	Yes

Access to Document

10.1063/1.103352

Cite this

@article{c771165f7ab54f04a0c016ad5195afb7,

title = "Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers",

abstract = "Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.",

author = "B. Laikhtman and M. Heiblum and U. Meirav",

year = "1990",

doi = "10.1063/1.103352",

language = "אנגלית",

volume = "57",

pages = "1557--1559",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

AU - Laikhtman, B.

AU - Heiblum, M.

AU - Meirav, U.

PY - 1990

Y1 - 1990

N2 - Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.

AB - Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.

UR - https://www.scopus.com/pages/publications/0347244912

U2 - 10.1063/1.103352

DO - 10.1063/1.103352

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0347244912

SN - 0003-6951

VL - 57

SP - 1557

EP - 1559

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this