Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

Youxi Lin, Sergey Suchalkin, Gela Kipshidze, Takashi Hosoda, Boris Laikhtman, David Westerfeld, Leon Shterengas, Gregory Belenky

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4 Scopus citations

Abstract

The effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated. The active area of the LEDs comprised two type-II superlattices with different periods and widths connected in series. Electroluminescence spectra of the devices with different positions of long wave and mid wave superlattice sections were mostly contributed by the superlattice closest to the p-contact. The experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlattice periods near p-barrier. Possible reason for the effect is reduction of hole diffusion coefficient in an active area of a superlattice LED under bias.

Original languageEnglish
Article number165701
JournalJournal of Applied Physics
Volume117
Issue number16
DOIs
StatePublished - 28 Apr 2015
Externally publishedYes

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© 2015 AIP Publishing LLC.

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