Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon

Liyou Yang*, A. Catalano, R. R. Arya, I. Balberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.

Original languageEnglish
Pages (from-to)908-910
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number9
DOIs
StatePublished - 1990
Externally publishedYes

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