Abstract
Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.
Original language | English |
---|---|
Pages (from-to) | 908-910 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 9 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |