Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon

Liyou Yang; A. Catalano; R. R. Arya; I. Balberg

doi:10.1063/1.103401

Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon

Liyou Yang^*, A. Catalano, R. R. Arya, I. Balberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Large simultaneous changes in ambipolar diffusion length (L_d) and photoconductivity (σ_ph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of L_d and σ_ph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.

Original language	English
Pages (from-to)	908-910
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	9
DOIs	https://doi.org/10.1063/1.103401
State	Published - 1990
Externally published	Yes

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abstract = "Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.",

author = "Liyou Yang and A. Catalano and Arya, \{R. R.\} and I. Balberg",

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AU - Yang, Liyou

AU - Catalano, A.

AU - Arya, R. R.

AU - Balberg, I.

PY - 1990

Y1 - 1990

N2 - Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.

AB - Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.

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Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon

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