Effect of various treatments on light emission properties of Si-rich-SiOx structures

M. Baran; N. Korsunska; L. Khomenkova; T. Stara; V. Khomenkov; Y. Goldstein; E. Savir; J. Jedrzejewski

Effect of various treatments on light emission properties of Si-rich-SiO_x structures

M. Baran^*, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The effect of preparation conditions and annealing treatment on Si-rich-SiO_x layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

Original language	English
Pages (from-to)	65-70
Number of pages	6
Journal	Solid State Phenomena
Volume	131-133
State	Published - 2008
Event	12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 - Erice, Italy Duration: 14 Oct 2007 → 19 Oct 2007

Keywords

EPR
Photoluminescence
Raman scattering
Si crystallites
Si-rich-SiOx structures
Silicon oxide defect

Cite this

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title = "Effect of various treatments on light emission properties of Si-rich-SiOx structures",

abstract = "The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.",

keywords = "EPR, Photoluminescence, Raman scattering, Si crystallites, Si-rich-SiOx structures, Silicon oxide defect",

author = "M. Baran and N. Korsunska and L. Khomenkova and T. Stara and V. Khomenkov and Y. Goldstein and E. Savir and J. Jedrzejewski",

year = "2008",

language = "אנגלית",

volume = "131-133",

pages = "65--70",

journal = "Solid State Phenomena",

issn = "1012-0394",

publisher = "Trans Tech Publications Ltd",

note = "12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007 ; Conference date: 14-10-2007 Through 19-10-2007",

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T1 - Effect of various treatments on light emission properties of Si-rich-SiOx structures

AU - Baran, M.

AU - Korsunska, N.

AU - Khomenkova, L.

AU - Stara, T.

AU - Khomenkov, V.

AU - Goldstein, Y.

AU - Savir, E.

AU - Jedrzejewski, J.

PY - 2008

Y1 - 2008

N2 - The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

AB - The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.

KW - EPR

KW - Photoluminescence

KW - Raman scattering

KW - Si crystallites

KW - Si-rich-SiOx structures

KW - Silicon oxide defect

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SN - 1012-0394

VL - 131-133

SP - 65

EP - 70

JO - Solid State Phenomena

JF - Solid State Phenomena

T2 - 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007

Y2 - 14 October 2007 through 19 October 2007

ER -

Effect of various treatments on light emission properties of Si-rich-SiO_x structures

Abstract

Keywords

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