Effects of helium dilution on glow discharge depositions of a-Si1-xGex:H alloys

Y. S. Tsuo*, Y. Xu, I. Balberg, Richard S. Crandall

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A study is made of the effects of helium feed gas dilution on the properties of a-Si1-xGex:H alloys deposited using radio-frequency glow discharge decomposition of silane and germane gas mixtures. Comparing a-Si1-xGex:H films deposited using 65% helium dilution with films deposited using 65% hydrogen dilution, it is found that films deposited with helium dilution have a longer charge carrier diffusion length and higher quantum efficiency-mobility-lifetime product values. It is also found that the incorporation of Ge atoms in the a-Si1-xGex:H film is more efficient with helium dilution than with hydrogen dilution.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages1334-1337
Number of pages4
ISBN (Print)0879426365
StatePublished - 1992
EventConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: 7 Oct 199111 Oct 1991

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
ISSN (Print)0160-8371

Conference

ConferenceConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period7/10/9111/10/91

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