Effects of temperature annealing on charge-injection-induced trapping in gate oxides of metal-oxide-silicon transistors

E. Avni*, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Temperature-detrapping-anneal treatments combined with charge-injection effects on gate oxides of transistors are studied by using a recently reported trapping-characterization method. Electron detrapping from repulsive traps, as well as from newly generated trapping sites is observed following the annealing step. It is observed that retrapping in both types of traps is made possible by additional charge injection through the oxide. On the other hand, thermal annealing up to 430°C does not change the density of both types of trapping sites. Although new trapping sites are generated under charge injection, heat treatment up to 430°C cannot change their existing density, but only their occupation level. As reported previously, surface states were found to be annealed under temperature treatments, but combined with additional charge injection, surface states show an enhanced nonsaturating generation.

Original languageEnglish
Pages (from-to)1563-1568
Number of pages6
JournalJournal of Applied Physics
Volume63
Issue number5
DOIs
StatePublished - 1988

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