We study GaAs/AlGaAs devices hosting a two-dimensional electron gas and coated with a monolayer of chiral organic molecules. We observe clear signatures of roomerature magnetism, which is induced in these systems by applying a gate voltage. We explain this phenomenon as a consequence of the spin-polarized charges that are injected into the semiconductor through the chiral molecules. The orientation of the magnetic moment can be manipulated by low gate voltages, with a switching rate in the megahertz range. Thus, our devices implement an efficient, electric field-controlled magnetization, which has long been desired for their technical prospects.
Bibliographical noteFunding Information:
Y.P. and R.N. acknowledge the partial support of the Volkswagen Foundation, the Israel Ministry of Science, and the John Templeton Foundation; K.M. acknowledges the support of the Israel Science Foundation Grant No. 1889/16.
© 2019 American Chemical Society.