Abstract
We study GaAs/AlGaAs devices hosting a two-dimensional electron gas and coated with a monolayer of chiral organic molecules. We observe clear signatures of roomerature magnetism, which is induced in these systems by applying a gate voltage. We explain this phenomenon as a consequence of the spin-polarized charges that are injected into the semiconductor through the chiral molecules. The orientation of the magnetic moment can be manipulated by low gate voltages, with a switching rate in the megahertz range. Thus, our devices implement an efficient, electric field-controlled magnetization, which has long been desired for their technical prospects.
Original language | American English |
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Pages (from-to) | 1139-1145 |
Number of pages | 7 |
Journal | Journal of Physical Chemistry Letters |
Volume | 10 |
Issue number | 5 |
DOIs | |
State | Published - 7 Mar 2019 |
Bibliographical note
Funding Information:Y.P. and R.N. acknowledge the partial support of the Volkswagen Foundation, the Israel Ministry of Science, and the John Templeton Foundation; K.M. acknowledges the support of the Israel Science Foundation Grant No. 1889/16.
Publisher Copyright:
© 2019 American Chemical Society.