Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

D. K. Nelson; M. A. Yacobson; V. D. Kagan; B. Gil; N. Grandjean; B. Beaumont; J. Massies; P. Gibart

doi:10.1134/1.1427964

Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

D. K. Nelson^*, M. A. Yacobson, V. D. Kagan, B. Gil, N. Grandjean, B. Beaumont, J. Massies, P. Gibart

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. It was established that electron scattering on impurities dominates over that from acoustic phonons in electron relaxation in energy and momentum. The mean free path of the hot electrons was estimated. The hot-electron mean free path in GaN/AlGaN quantum wells was found to be an order of magnitude larger than that in epitaxial GaN films, which is due to the electron scattering probability being lower in the two-dimensional case.

Original language	English
Pages (from-to)	2321-2327
Number of pages	7
Journal	Physics of the Solid State
Volume	43
Issue number	12
DOIs	https://doi.org/10.1134/1.1427964
State	Published - Dec 2001
Externally published	Yes

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title = "Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells",

abstract = "Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. It was established that electron scattering on impurities dominates over that from acoustic phonons in electron relaxation in energy and momentum. The mean free path of the hot electrons was estimated. The hot-electron mean free path in GaN/AlGaN quantum wells was found to be an order of magnitude larger than that in epitaxial GaN films, which is due to the electron scattering probability being lower in the two-dimensional case.",

author = "Nelson, \{D. K.\} and Yacobson, \{M. A.\} and Kagan, \{V. D.\} and B. Gil and N. Grandjean and B. Beaumont and J. Massies and P. Gibart",

year = "2001",

month = dec,

doi = "10.1134/1.1427964",

language = "אנגלית",

volume = "43",

pages = "2321--2327",

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T1 - Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

AU - Nelson, D. K.

AU - Yacobson, M. A.

AU - Kagan, V. D.

AU - Gil, B.

AU - Grandjean, N.

AU - Beaumont, B.

AU - Massies, J.

AU - Gibart, P.

PY - 2001/12

Y1 - 2001/12

N2 - Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. It was established that electron scattering on impurities dominates over that from acoustic phonons in electron relaxation in energy and momentum. The mean free path of the hot electrons was estimated. The hot-electron mean free path in GaN/AlGaN quantum wells was found to be an order of magnitude larger than that in epitaxial GaN films, which is due to the electron scattering probability being lower in the two-dimensional case.

AB - Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. It was established that electron scattering on impurities dominates over that from acoustic phonons in electron relaxation in energy and momentum. The mean free path of the hot electrons was estimated. The hot-electron mean free path in GaN/AlGaN quantum wells was found to be an order of magnitude larger than that in epitaxial GaN films, which is due to the electron scattering probability being lower in the two-dimensional case.

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VL - 43

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EP - 2327

JO - Physics of the Solid State

JF - Physics of the Solid State

IS - 12

ER -

Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells

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