Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay; Adi Schlesinger; Uri Argaman; Long Nguyen; Nitzan Maman; Bar Koren; Meital Ozeri; Guy Makov; Yuval Golan; Doron Azulay

doi:10.1021/acsami.2c22134

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay, Adi Schlesinger, Uri Argaman, Long Nguyen, Nitzan Maman, Bar Koren, Meital Ozeri, Guy Makov^*, Yuval Golan^*, Doron Azulay^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

Original language	American English
Pages (from-to)	15668-15675
Number of pages	8
Journal	ACS applied materials & interfaces
Volume	15
Issue number	12
DOIs	https://doi.org/10.1021/acsami.2c22134
State	Published - 29 Mar 2023

Bibliographical note

Funding Information:
The authors thank Dr. Sharon Hazan for expert assistance in FTIR spectrometery. D.A. is thankful for ISF Grant 576/21 and the support of the Azrieli college research fund. This work was supported by the Israel Science Foundation via Grant 1760/18 (Y.G.).

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

SnSe
electrical properties
solution deposition
thin films
ultranarrow band gap

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@article{0af356a4814b488880922a507d7d8575,

title = "Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material",

abstract = "We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.",

keywords = "SnSe, electrical properties, solution deposition, thin films, ultranarrow band gap",

author = "Noy Zakay and Adi Schlesinger and Uri Argaman and Long Nguyen and Nitzan Maman and Bar Koren and Meital Ozeri and Guy Makov and Yuval Golan and Doron Azulay",

note = "Funding Information: The authors thank Dr. Sharon Hazan for expert assistance in FTIR spectrometery. D.A. is thankful for ISF Grant 576/21 and the support of the Azrieli college research fund. This work was supported by the Israel Science Foundation via Grant 1760/18 (Y.G.). Publisher Copyright: {\textcopyright} 2023 American Chemical Society.",

year = "2023",

month = mar,

day = "29",

doi = "10.1021/acsami.2c22134",

language = "American English",

volume = "15",

pages = "15668--15675",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Electrical and Optical Properties of γ-SnSe

T2 - A New Ultra-narrow Band Gap Material

AU - Zakay, Noy

AU - Schlesinger, Adi

AU - Argaman, Uri

AU - Nguyen, Long

AU - Maman, Nitzan

AU - Koren, Bar

AU - Ozeri, Meital

AU - Makov, Guy

AU - Golan, Yuval

AU - Azulay, Doron

N1 - Funding Information: The authors thank Dr. Sharon Hazan for expert assistance in FTIR spectrometery. D.A. is thankful for ISF Grant 576/21 and the support of the Azrieli college research fund. This work was supported by the Israel Science Foundation via Grant 1760/18 (Y.G.). Publisher Copyright: © 2023 American Chemical Society.

PY - 2023/3/29

Y1 - 2023/3/29

N2 - We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

AB - We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

KW - SnSe

KW - electrical properties

KW - solution deposition

KW - thin films

KW - ultranarrow band gap

UR - http://www.scopus.com/inward/record.url?scp=85150456830&partnerID=8YFLogxK

U2 - 10.1021/acsami.2c22134

DO - 10.1021/acsami.2c22134

M3 - Article

C2 - 36920349

AN - SCOPUS:85150456830

SN - 1944-8244

VL - 15

SP - 15668

EP - 15675

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 12

ER -

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Abstract

Bibliographical note

Keywords

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