Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay; Adi Schlesinger; Uri Argaman; Long Nguyen; Nitzan Maman; Bar Koren; Meital Ozeri; Guy Makov; Yuval Golan; Doron Azulay

doi:10.1021/acsami.2c22134

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay, Adi Schlesinger, Uri Argaman, Long Nguyen, Nitzan Maman, Bar Koren, Meital Ozeri, Guy Makov^*, Yuval Golan^*, Doron Azulay^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

Original language	English
Pages (from-to)	15668-15675
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	12
DOIs	https://doi.org/10.1021/acsami.2c22134
State	Published - 29 Mar 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

SnSe
electrical properties
solution deposition
thin films
ultranarrow band gap

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10.1021/acsami.2c22134

Cite this

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abstract = "We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.",

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AU - Maman, Nitzan

AU - Koren, Bar

AU - Ozeri, Meital

AU - Makov, Guy

AU - Golan, Yuval

AU - Azulay, Doron

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Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Abstract

Bibliographical note

Keywords

UN SDGs

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