Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

Noy Zakay, Adi Schlesinger, Uri Argaman, Long Nguyen, Nitzan Maman, Bar Koren, Meital Ozeri, Guy Makov*, Yuval Golan*, Doron Azulay*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

Original languageAmerican English
Pages (from-to)15668-15675
Number of pages8
JournalACS applied materials & interfaces
Volume15
Issue number12
DOIs
StatePublished - 29 Mar 2023

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

  • SnSe
  • electrical properties
  • solution deposition
  • thin films
  • ultranarrow band gap

Fingerprint

Dive into the research topics of 'Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material'. Together they form a unique fingerprint.

Cite this