Electrical behavior of Si/SiO2 nanocomposite films

V. Iancu; L. Jdira; M. Draghic; M. R. Mitroi; I. Balberg; M. L. Ciurea

doi:10.1109/SMICND.2003.1251350

Electrical behavior of Si/SiO₂ nanocomposite films

V. Iancu, L. Jdira, M. Draghic, M. R. Mitroi, I. Balberg, M. L. Ciurea^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Electrical behavior of Si/SiO₂ nanocomposite films is studied. The samples preparation is presented. Current-voltage and current-temperature characteristics are analyzed in the frame of a conduction model. The agreement between the experimental data and the fit is excellent.

Original language	English
Title of host publication	2003 26th International Semiconductor Conference, CAS 2003, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	83-86
Number of pages	4
ISBN (Electronic)	0780378210
DOIs	https://doi.org/10.1109/SMICND.2003.1251350
State	Published - 2003
Event	26th International Semiconductor Conference, CAS 2003 - Sinaia, Romania Duration: 28 Sep 2003 → 2 Oct 2003

Publication series

Name	Proceedings of the International Semiconductor Conference, CAS
Volume	1

Conference

Conference	26th International Semiconductor Conference, CAS 2003
Country/Territory	Romania
City	Sinaia
Period	28/09/03 → 2/10/03

Bibliographical note

Publisher Copyright:
© 2001 IEEE.

Keywords

Annealing
Atmosphere
Conducting materials
Physics
Potential well
Semiconductor films
Silicon
Sputtering
Substrates
Tunneling

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/SMICND.2003.1251350

Cite this

Iancu, V., Jdira, L., Draghic, M., Mitroi, M. R., Balberg, I., & Ciurea, M. L. (2003). Electrical behavior of Si/SiO₂ nanocomposite films. In 2003 26th International Semiconductor Conference, CAS 2003, Proceedings (pp. 83-86). Article 1251350 (Proceedings of the International Semiconductor Conference, CAS; Vol. 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMICND.2003.1251350

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title = "Electrical behavior of Si/SiO2 nanocomposite films",

abstract = "Electrical behavior of Si/SiO2 nanocomposite films is studied. The samples preparation is presented. Current-voltage and current-temperature characteristics are analyzed in the frame of a conduction model. The agreement between the experimental data and the fit is excellent.",

keywords = "Annealing, Atmosphere, Conducting materials, Physics, Potential well, Semiconductor films, Silicon, Sputtering, Substrates, Tunneling",

author = "V. Iancu and L. Jdira and M. Draghic and Mitroi, {M. R.} and I. Balberg and Ciurea, {M. L.}",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 26th International Semiconductor Conference, CAS 2003 ; Conference date: 28-09-2003 Through 02-10-2003",

year = "2003",

doi = "10.1109/SMICND.2003.1251350",

language = "אנגלית",

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Iancu, V, Jdira, L, Draghic, M, Mitroi, MR, Balberg, I & Ciurea, ML 2003, Electrical behavior of Si/SiO₂ nanocomposite films. in 2003 26th International Semiconductor Conference, CAS 2003, Proceedings., 1251350, Proceedings of the International Semiconductor Conference, CAS, vol. 1, Institute of Electrical and Electronics Engineers Inc., pp. 83-86, 26th International Semiconductor Conference, CAS 2003, Sinaia, Romania, 28/09/03. https://doi.org/10.1109/SMICND.2003.1251350

Electrical behavior of Si/SiO₂ nanocomposite films. / Iancu, V.; Jdira, L.; Draghic, M. et al.
2003 26th International Semiconductor Conference, CAS 2003, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 83-86 1251350 (Proceedings of the International Semiconductor Conference, CAS; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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