Electrical characterization of reoxidized nitrided silicon films on silicon

Adrián Faigón; J. Shappir

doi:10.1063/1.347236

Electrical characterization of reoxidized nitrided silicon films on silicon

Adrián Faigón^*
, J. Shappir

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Thin oxynitride layers in the range of 50-100 Å thickness were grown by the oxidation of a thermally nitrided silicon surface. The interface electrical properties were investigated and related to the film composition. Similar values to those observed in standard oxides were obtained for the density of interface states, the surface generation velocity, and surface mobility for those layers having the highest oxidation resistance.

Original language	English
Pages (from-to)	1484-1489
Number of pages	6
Journal	Journal of Applied Physics
Volume	69
Issue number	3
DOIs	https://doi.org/10.1063/1.347236
State	Published - 1991

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title = "Electrical characterization of reoxidized nitrided silicon films on silicon",

abstract = "Thin oxynitride layers in the range of 50-100 {\AA} thickness were grown by the oxidation of a thermally nitrided silicon surface. The interface electrical properties were investigated and related to the film composition. Similar values to those observed in standard oxides were obtained for the density of interface states, the surface generation velocity, and surface mobility for those layers having the highest oxidation resistance.",

author = "Adri{\'a}n Faig{\'o}n and J. Shappir",

year = "1991",

doi = "10.1063/1.347236",

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AU - Faigón, Adrián

AU - Shappir, J.

PY - 1991

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N2 - Thin oxynitride layers in the range of 50-100 Å thickness were grown by the oxidation of a thermally nitrided silicon surface. The interface electrical properties were investigated and related to the film composition. Similar values to those observed in standard oxides were obtained for the density of interface states, the surface generation velocity, and surface mobility for those layers having the highest oxidation resistance.

AB - Thin oxynitride layers in the range of 50-100 Å thickness were grown by the oxidation of a thermally nitrided silicon surface. The interface electrical properties were investigated and related to the film composition. Similar values to those observed in standard oxides were obtained for the density of interface states, the surface generation velocity, and surface mobility for those layers having the highest oxidation resistance.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

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Electrical characterization of reoxidized nitrided silicon films on silicon

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