Electrical properties and photoluminescence of SiOx layers with Si nanocrystals in relation to the SiOx composition

I. V. Antonova*, M. B. Gulyaev, Z. Sh Yanovitskaya, V. A. Volodin, D. V. Marin, M. D. Efremov, Y. Goldstein, J. Jedrzejewski

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The photoluminescence and electrical properties are compared for silicon-oxide layers containing Si nanocrystals and having different Si content. The oxide was deposited by co-sputtering of silicon dioxide and silicon with the subsequent annealing for the formation of nanocrystals. Excess Si content in the layer varies along the sample from 6 to 74 vol %. It is found that a charge magnitude determined from the flat-band voltage has a pronounced peak for the excess Si content of about 26%, the largest charge correlating with the highest photoluminescence intensity. The further increase in the excess Si content in oxide leads to a decrease in both the oxide charge and the photoluminescence intensity and to the appearance of percolation conductivity.

Original languageEnglish
Pages (from-to)1198-1203
Number of pages6
JournalSemiconductors
Volume40
Issue number10
DOIs
StatePublished - Oct 2006

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