Abstract
The photoluminescence and electrical properties are compared for silicon-oxide layers containing Si nanocrystals and having different Si content. The oxide was deposited by co-sputtering of silicon dioxide and silicon with the subsequent annealing for the formation of nanocrystals. Excess Si content in the layer varies along the sample from 6 to 74 vol %. It is found that a charge magnitude determined from the flat-band voltage has a pronounced peak for the excess Si content of about 26%, the largest charge correlating with the highest photoluminescence intensity. The further increase in the excess Si content in oxide leads to a decrease in both the oxide charge and the photoluminescence intensity and to the appearance of percolation conductivity.
Original language | English |
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Pages (from-to) | 1198-1203 |
Number of pages | 6 |
Journal | Semiconductors |
Volume | 40 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2006 |