Electromigration-induced flow of islands and voids on the Cu(001) surface

Electromigration-induced flow of islands and voids on the Cu(001) surface is studied at the atomic scale. The basic drift mechanisms are identified using a complete set of energy barriers for adatom hopping on the Cu(001) surface, combined with kinetic Monte Carlo simulations. The energy barriers are calculated by the embedded atom method, and parametrized using a simple model. The dependence of the flow on the temperature, the size of the clusters, and the strength of the applied field is obtained. For both islands and voids it is found that edge diffusion is the dominant mass-transport mechanism. The rate limiting steps are identified. For both islands and voids they involve detachment of atoms from corners into the adjacent edge. The energy barriers for these moves are found to be in good agreement with the activation energy for island and void drift obtained from Arrhenius analysis of the simulation results. The relevance of the results to other fcc(001) metal surfaces and their experimental implications are discussed.