Electron capture by charged impurities in semiconductors under conditions of spatial diffusion

The capture of electrons by charged impurities in semiconductors due to spatial diffusion is investigated theoretically. In a semiconductor, an electron either can be captured by the field of a charged impurity if this electron loses energy by emitting phonons or can be ionized from the trapping state if it acquires energy by absorbing phonons. The electron trapping is governed by a change in the distribution function of electrons in both coordinate and momentum space. The trapping coefficient is calculated under the condition where it is determined by the diffusion redistribution of the electron density in the field of a charged impurity.