Electron trapping in oxynitride layers in metal-oxide-semiconductor structures

Ido Rahat*, Joseph Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This paper discusses electron injected induced trapping-detrapping behavior of nitrided gate insulators and its consistency with the dynamic balance model which characterizes standard silicon dioxide insulators. The experimental results show that the dynamic trapping model is also applicable for the novel nitrided insulators; trapping-detrapping characteristics are field dependent, the magnitude of the trapped negative charge is reduced when the electric field is increased, trapping-detrapping reversibility is evident, steady state trapping level is determined by the insulator field, and the trapping and detrapping transients are dominated by the density of the injected electrons. The occupation probability function is determined to be almost identical for both insulator types. The main difference between nitrided insulators and control oxides is lower trapping cross sections for nitrided insulators, and lower concentration of generated traps leading to improved immunity to degradation during charge injection. The novel dielectric layer is of potential use for the fabrication of reliable ultrathin gate oxide films for standard complementary metal-oxide-semiconductor technology.

Original languageEnglish
Pages (from-to)2279-2283
Number of pages5
JournalJournal of Applied Physics
Volume76
Issue number4
DOIs
StatePublished - 1994

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