ELECTRON TRAPPING IN SiO//2 - AN INJECTION MODE DEPENDENT PHENOMENON.

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Original language	English
Pages (from-to)	604-607
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1981

Cite this

@article{ddb177cc5ae54706b4c06cd4084584e2,

title = "ELECTRON TRAPPING IN SiO//2 - AN INJECTION MODE DEPENDENT PHENOMENON.",

author = "Boaz Eitan and D. Frohman-Bentchkowsky and J. Shappir",

year = "1981",

language = "אנגלית",

pages = "604--607",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - ELECTRON TRAPPING IN SiO//2 - AN INJECTION MODE DEPENDENT PHENOMENON.

AU - Eitan, Boaz

AU - Frohman-Bentchkowsky, D.

AU - Shappir, J.

PY - 1981

Y1 - 1981

UR - https://www.scopus.com/pages/publications/0019690699

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0019690699

SN - 0163-1918

SP - 604

EP - 607

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -