Electron trapping in SiO2 - An injection mode dependent phenomenon

B. Eitan*, D. Frohman-Bentchkowsky, J. Shappir, M. Balog

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Electron trapping in metal-oxide-silicon structures and its dependence on the injected electron energy distribution and oxide field were studied. It is found that at high injection levels trapping efficiency and saturation level increase with the accelerating field in the Si, and decrease with increase in the oxide field. These results differ markedly from those obtained in low level injection, in which it is assumed that trapping is of electrons injected from the Si into the oxide conduction band. Based on the high level injection experimental results, it is proposed that significant electron trapping is obtained through direct tunneling of hot electrons with energy less than the potential barrier, into localized states in the oxide near the Si-SiO 2 interface.

Original languageEnglish
Pages (from-to)523-525
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number6
DOIs
StatePublished - 1982

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