Electronic properties of chalcogenide semiconductor nanostructures and thin-films

Oded Millo

doi:10.1109/ICIPRM.2016.7528788

Electronic properties of chalcogenide semiconductor nanostructures and thin-films

Oded Millo^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

I will review our combined local-probe and transport measurements on three types of semiconductor chalcogenide systems. Starting with Cu₂S nanocrystals, I will present a new method for achieving p-type doping, by which Cu vacancies are formed upon annealing at moderate temperatures, yielding free holes. Consequently, the conductance of Cu₂S nanocrystals arrays increases by 4-6 orders of magnitude. This method enable patterned doping by applying focused laser illuminations. Next, I will discuss the origin of the surprisingly high conversion efficiency of polycrystalline Cu(In,Ga)Se solar-cells, focusing on the role of grain-boundaries. Local-probe scanning tunneling spectroscopy (STS) and conductive-probe atomic force microscopy measurements provide evidence for significant band-bending at grain-boundaries, assisting the collection efficiency of photo-generated minority (electron) charges, and reduced deep-level density of states, reducing the recombination rate. Finally, STS measurements on CdSe nanoplatelets will be presented, providing first evidence for a unique two-dimensional behavior and quantum-confinement associated with their thickness only.

Original language	English
Title of host publication	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509019649
DOIs	https://doi.org/10.1109/ICIPRM.2016.7528788
State	Published - 1 Aug 2016
Event	2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan Duration: 26 Jun 2016 → 30 Jun 2016

Publication series

Name	2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Conference

Conference	2016 Compound Semiconductor Week, CSW 2016
Country/Territory	Japan
City	Toyama
Period	26/06/16 → 30/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

CIGSe solar-cells
atomic force microscopy
nanocrystals
nanoplatelets
scanning tunneling spectrsocopy

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ICIPRM.2016.7528788

Cite this

Millo, O. (2016). Electronic properties of chalcogenide semiconductor nanostructures and thin-films. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 Article 7528788 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528788

Millo, Oded. / Electronic properties of chalcogenide semiconductor nanostructures and thin-films. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

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abstract = "I will review our combined local-probe and transport measurements on three types of semiconductor chalcogenide systems. Starting with Cu2S nanocrystals, I will present a new method for achieving p-type doping, by which Cu vacancies are formed upon annealing at moderate temperatures, yielding free holes. Consequently, the conductance of Cu2S nanocrystals arrays increases by 4-6 orders of magnitude. This method enable patterned doping by applying focused laser illuminations. Next, I will discuss the origin of the surprisingly high conversion efficiency of polycrystalline Cu(In,Ga)Se solar-cells, focusing on the role of grain-boundaries. Local-probe scanning tunneling spectroscopy (STS) and conductive-probe atomic force microscopy measurements provide evidence for significant band-bending at grain-boundaries, assisting the collection efficiency of photo-generated minority (electron) charges, and reduced deep-level density of states, reducing the recombination rate. Finally, STS measurements on CdSe nanoplatelets will be presented, providing first evidence for a unique two-dimensional behavior and quantum-confinement associated with their thickness only.",

keywords = "CIGSe solar-cells, atomic force microscopy, nanocrystals, nanoplatelets, scanning tunneling spectrsocopy",

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Millo, O 2016, Electronic properties of chalcogenide semiconductor nanostructures and thin-films. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528788, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 26/06/16. https://doi.org/10.1109/ICIPRM.2016.7528788

Electronic properties of chalcogenide semiconductor nanostructures and thin-films. / Millo, Oded.
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528788 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - I will review our combined local-probe and transport measurements on three types of semiconductor chalcogenide systems. Starting with Cu2S nanocrystals, I will present a new method for achieving p-type doping, by which Cu vacancies are formed upon annealing at moderate temperatures, yielding free holes. Consequently, the conductance of Cu2S nanocrystals arrays increases by 4-6 orders of magnitude. This method enable patterned doping by applying focused laser illuminations. Next, I will discuss the origin of the surprisingly high conversion efficiency of polycrystalline Cu(In,Ga)Se solar-cells, focusing on the role of grain-boundaries. Local-probe scanning tunneling spectroscopy (STS) and conductive-probe atomic force microscopy measurements provide evidence for significant band-bending at grain-boundaries, assisting the collection efficiency of photo-generated minority (electron) charges, and reduced deep-level density of states, reducing the recombination rate. Finally, STS measurements on CdSe nanoplatelets will be presented, providing first evidence for a unique two-dimensional behavior and quantum-confinement associated with their thickness only.

AB - I will review our combined local-probe and transport measurements on three types of semiconductor chalcogenide systems. Starting with Cu2S nanocrystals, I will present a new method for achieving p-type doping, by which Cu vacancies are formed upon annealing at moderate temperatures, yielding free holes. Consequently, the conductance of Cu2S nanocrystals arrays increases by 4-6 orders of magnitude. This method enable patterned doping by applying focused laser illuminations. Next, I will discuss the origin of the surprisingly high conversion efficiency of polycrystalline Cu(In,Ga)Se solar-cells, focusing on the role of grain-boundaries. Local-probe scanning tunneling spectroscopy (STS) and conductive-probe atomic force microscopy measurements provide evidence for significant band-bending at grain-boundaries, assisting the collection efficiency of photo-generated minority (electron) charges, and reduced deep-level density of states, reducing the recombination rate. Finally, STS measurements on CdSe nanoplatelets will be presented, providing first evidence for a unique two-dimensional behavior and quantum-confinement associated with their thickness only.

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KW - scanning tunneling spectrsocopy

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 Compound Semiconductor Week, CSW 2016

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Millo O. Electronic properties of chalcogenide semiconductor nanostructures and thin-films. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528788. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). doi: 10.1109/ICIPRM.2016.7528788

Electronic properties of chalcogenide semiconductor nanostructures and thin-films

Abstract

Publication series

Conference

Bibliographical note

Keywords

UN SDGs

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