Electronic properties of unstrained unrelaxed narrow gap InAsxSb1-x alloys

S. Suchalkin; J. Ludwig; G. Belenky; B. Laikhtman; G. Kipshidze; Y. Lin; L. Shterengas; D. Smirnov; S. Luryi; W. L. Sarney; S. P. Svensson

doi:10.1088/0022-3727/49/10/105101

Electronic properties of unstrained unrelaxed narrow gap InAs_xSb_1-x alloys

S. Suchalkin, J. Ludwig, G. Belenky, B. Laikhtman, G. Kipshidze, Y. Lin, L. Shterengas, D. Smirnov, S. Luryi, W. L. Sarney, S. P. Svensson

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The electronic properties of unstrained unrelaxed InAs_xSb_1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: E_g = 0.10 eV, m∗ = 0.0082 m₀ at 4.2 K. The bowing coefficient of 0.038 m₀ obtained for the electron effective mass is in good agreement with that obtained from the Kane model.

Original language	English
Article number	105101
Journal	Journal of Physics D: Applied Physics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1088/0022-3727/49/10/105101
State	Published - 3 Feb 2016

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.

Keywords

III-V semiconductors
metamorphic materials
narrow gap semiconductors

Access to Document

10.1088/0022-3727/49/10/105101

Cite this

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title = "Electronic properties of unstrained unrelaxed narrow gap InAsxSb1-x alloys",

abstract = "The electronic properties of unstrained unrelaxed InAsxSb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m∗ = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.",

keywords = "III-V semiconductors, metamorphic materials, narrow gap semiconductors",

author = "S. Suchalkin and J. Ludwig and G. Belenky and B. Laikhtman and G. Kipshidze and Y. Lin and L. Shterengas and D. Smirnov and S. Luryi and Sarney, {W. L.} and Svensson, {S. P.}",

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AU - Suchalkin, S.

AU - Ludwig, J.

AU - Belenky, G.

AU - Laikhtman, B.

AU - Kipshidze, G.

AU - Lin, Y.

AU - Shterengas, L.

AU - Smirnov, D.

AU - Luryi, S.

AU - Sarney, W. L.

AU - Svensson, S. P.

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N2 - The electronic properties of unstrained unrelaxed InAsxSb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m∗ = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.

AB - The electronic properties of unstrained unrelaxed InAsxSb1-x alloys have been determined in a wide range of alloy compositions using IR magnetospectroscopy, magnetotransport and IR photoluminescence. All studied alloys have n-type background doping with electron concentration decreasing with the Sb content. The composition dependence of the background doping concentration follows an empirical exponential law in a wide range of compositions. Both bandgap and electron effective mass dependence on alloy composition exhibit negative bowing reaching lowest values at x = 0.63: Eg = 0.10 eV, m∗ = 0.0082 m0 at 4.2 K. The bowing coefficient of 0.038 m0 obtained for the electron effective mass is in good agreement with that obtained from the Kane model.

KW - III-V semiconductors

KW - metamorphic materials

KW - narrow gap semiconductors

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