Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

Keyphrases

• Electronic Structure 100%
• Emission Polarization 100%
• Molecular Beam Epitaxy 100%
• Morphological Structure 100%
• Atom Probe Tomography 100%
• Scanning Transmission Electron Microscopy 100%
• Dot-like 100%
• InP Substrate 100%
• Electronic Emission 100%
• Quantum Dots 50%
• Structural Properties 50%
• Nanostructures 50%
• Quantum Dash 50%
• Electronic Structure Calculations 50%
• Growth Conditions 50%
• Optical Properties 50%
• Structural Information 50%
• Aspect Ratio 50%
• Energy Levels 50%
• Oscillator Strength 50%
• Degree of Linear Polarization 50%
• System Parameters 50%
• Material System 50%
• Indium 50%
• Energy Transition 50%
• In-plane Geometry 50%
• Composition Distribution 50%
• Polarized Photoluminescence 50%
• Migration Length 50%
• Structure Distribution 50%
• Lateral Symmetry 50%
• Plane Shape 50%
• Individual Nanostructures 50%
• InGaAlAs 50%
• Surface Emission 50%

Material Science

• Quantum Dot 100%
• Electronic Structure 100%
• Molecular Beam Epitaxy 100%
• Nanocrystalline Material 66%
• Scanning Transmission Electron Microscopy 66%
• Tomography 66%
• Atom Probe 66%
• Structural Property 33%
• Electronic Structure Calculation 33%
• Photoluminescence 33%
• Indium 33%
• Mechanical Strength 33%

Engineering

• Quantum Dot 100%
• Transmissions 66%
• Atom Probe Tomography 66%
• Structural Property 33%
• Structure Calculation 33%
• Aspect Ratio 33%
• Nanostructure 33%
• Nanomaterial 33%
• Linear Polarization 33%
• System Parameter 33%
• Material System 33%
• Energy Transition 33%
• Substantial Increase 33%
• Growth Condition 33%