TY - JOUR
T1 - Electronic transport in Si-SiO2 nanocomposite films
AU - Ciurea, M. L.
AU - Teodorescu, V. S.
AU - Iancu, V.
AU - Balberg, I.
PY - 2006/5/20
Y1 - 2006/5/20
N2 - We report experimental investigations and modeling of the electronic transport in Si-SiO2 nanocomposite films. The current-voltage characteristics measured at room temperature are interpreted as due to high field-assisted tunneling. The activation energies from the current-temperature curves are given by the energy separations between quantum confinement electronic states, determined from a quantum well model. Consequently, the calculated mean diameter of a nanodot (5.2 nm) is in good agreement with the microstructure data (5 nm). Also, the potential barrier between nanocrystalline Si and amorphous SiO2, previously obtained for nanocrystalline oxidized porous Si (2.2 eV), is confirmed.
AB - We report experimental investigations and modeling of the electronic transport in Si-SiO2 nanocomposite films. The current-voltage characteristics measured at room temperature are interpreted as due to high field-assisted tunneling. The activation energies from the current-temperature curves are given by the energy separations between quantum confinement electronic states, determined from a quantum well model. Consequently, the calculated mean diameter of a nanodot (5.2 nm) is in good agreement with the microstructure data (5 nm). Also, the potential barrier between nanocrystalline Si and amorphous SiO2, previously obtained for nanocrystalline oxidized porous Si (2.2 eV), is confirmed.
UR - http://www.scopus.com/inward/record.url?scp=33646181956&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2006.03.070
DO - 10.1016/j.cplett.2006.03.070
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AN - SCOPUS:33646181956
SN - 0009-2614
VL - 423
SP - 225
EP - 228
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -
