Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots

Boaz Alperson; Israel Rubinstein; Gary Hodes; Danny Porath; Oded Millo

doi:10.1063/1.124808

Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots

Boaz Alperson, Israel Rubinstein, Gary Hodes, Danny Porath, Oded Millo

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

The evolution of the electronic structure of semiconductor quantum dots (QDs) with QD size in the strong confinement regime was demonstrated by employing low-temperature tunneling current-voltage spectroscopy to individual electrodeposited CdSe QDs. The values of Eg, map discrete energy levels in both valence and conduction bands were measured from the spectra. The occurrence of single-electron tunneling effects for isolated QDs of different sizes were shown.

Original language	English
Pages (from-to)	1751-1753
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	12
DOIs	https://doi.org/10.1063/1.124808
State	Published - 20 Sep 1999

Access to Document

10.1063/1.124808

Cite this

@article{c260915410944f549f4a1a3b11de43f9,

title = "Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots",

abstract = "The evolution of the electronic structure of semiconductor quantum dots (QDs) with QD size in the strong confinement regime was demonstrated by employing low-temperature tunneling current-voltage spectroscopy to individual electrodeposited CdSe QDs. The values of Eg, map discrete energy levels in both valence and conduction bands were measured from the spectra. The occurrence of single-electron tunneling effects for isolated QDs of different sizes were shown.",

author = "Boaz Alperson and Israel Rubinstein and Gary Hodes and Danny Porath and Oded Millo",

year = "1999",

month = sep,

day = "20",

doi = "10.1063/1.124808",

language = "אנגלית",

volume = "75",

pages = "1751--1753",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots

AU - Alperson, Boaz

AU - Rubinstein, Israel

AU - Hodes, Gary

AU - Porath, Danny

AU - Millo, Oded

PY - 1999/9/20

Y1 - 1999/9/20

N2 - The evolution of the electronic structure of semiconductor quantum dots (QDs) with QD size in the strong confinement regime was demonstrated by employing low-temperature tunneling current-voltage spectroscopy to individual electrodeposited CdSe QDs. The values of Eg, map discrete energy levels in both valence and conduction bands were measured from the spectra. The occurrence of single-electron tunneling effects for isolated QDs of different sizes were shown.

AB - The evolution of the electronic structure of semiconductor quantum dots (QDs) with QD size in the strong confinement regime was demonstrated by employing low-temperature tunneling current-voltage spectroscopy to individual electrodeposited CdSe QDs. The values of Eg, map discrete energy levels in both valence and conduction bands were measured from the spectra. The occurrence of single-electron tunneling effects for isolated QDs of different sizes were shown.

UR - http://www.scopus.com/inward/record.url?scp=0032606880&partnerID=8YFLogxK

U2 - 10.1063/1.124808

DO - 10.1063/1.124808

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0032606880

SN - 0003-6951

VL - 75

SP - 1751

EP - 1753

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Energy level tunneling spectroscopy and single electron charging in individual CdSe quantum dots

Abstract

Access to Document

Other files and links

Fingerprint

Cite this