Energy spectrum of InAs/GaSB heterostructures

B. Laikhtman*, Smadar De-Leon, L. D. Shvartsman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAs/GaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

Original languageAmerican English
Pages (from-to)257-262
Number of pages6
JournalSolid State Communications
Issue number5
StatePublished - Nov 1997


  • A. Quantum wells
  • D. Electronic band structure


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