Energy spectrum of InAs/GaSB heterostructures

B. Laikhtman; Smadar De-Leon; L. D. Shvartsman

doi:10.1016/S0038-1098(97)00290-1

Energy spectrum of InAs/GaSB heterostructures

B. Laikhtman^*, Smadar De-Leon, L. D. Shvartsman

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAs/GaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

Original language	English
Pages (from-to)	257-262
Number of pages	6
Journal	Solid State Communications
Volume	104
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(97)00290-1
State	Published - Nov 1997

Keywords

A. Quantum wells
D. Electronic band structure

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10.1016/S0038-1098(97)00290-1

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title = "Energy spectrum of InAs/GaSB heterostructures",

abstract = "A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAs/GaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.",

keywords = "A. Quantum wells, D. Electronic band structure",

author = "B. Laikhtman and Smadar De-Leon and Shvartsman, \{L. D.\}",

year = "1997",

month = nov,

doi = "10.1016/S0038-1098(97)00290-1",

language = "אנגלית",

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journal = "Solid State Communications",

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T1 - Energy spectrum of InAs/GaSB heterostructures

AU - Laikhtman, B.

AU - De-Leon, Smadar

AU - Shvartsman, L. D.

PY - 1997/11

Y1 - 1997/11

N2 - A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAs/GaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

AB - A simple model is developed for the calculation of carrier spectrum in the presence of self-consistent potential for various kinds of quantum well systems. The model is applied to InAs/GaSb heterostructures and presents simple analytical results. The accuracy of the model is nearly equal to that of numerical models but its usage is much easier.

KW - A. Quantum wells

KW - D. Electronic band structure

UR - https://www.scopus.com/pages/publications/0031271085

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DO - 10.1016/S0038-1098(97)00290-1

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AN - SCOPUS:0031271085

SN - 0038-1098

VL - 104

SP - 257

EP - 262

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Energy spectrum of InAs/GaSB heterostructures

Abstract

Keywords

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